s o t - 2 2 3 u n i t : m m 3 . 0 0 + 0 . 1 - 0 . 1 0 . 7 0 + 0 . 1 - 0 . 1 2 . 9 4 . 6 6 . 5 0 + 0 . 2 - 0 . 2 3 . 5 0 + 0 . 2 - 0 . 2 0 . 9 0 + 0 . 2 - 0 . 2 7 . 0 0 + 0 . 3 - 0 . 3 1 . 6 5 + 0 . 1 5 - 0 . 1 5 0 . 1 m a x 0 . 9 0 + 0 . 0 5 - 0 . 0 5 1 2 4 3 1.gate 3.source 2.drain 4.drain smd t ype mosfet ?? f e a tu r e s ?? v d s ( v ) = 10 0v ?? i d = 1.7 a ( v g s = 10 v ) ?? r d s ( o n ) ? 35 0m |? ( v g s = 1 0v ) , i d = 0.8 5 a ?? r d s ( o n ) ? 38 0m |? ( v g s = 5 v ) , i d = 0 .85 a ?? a b so lu te m a xim u m ra tin g s t a = 2 5 ?? p ar am ete r s y m bo l ra ti n g un i t dr ai n - s ou r c e v ol tag e v d s 1 00 g ate - s ou r c e v ol t ag e v g s ?2 0 cont i nu ou s dr ai n cur r en t - cont i nu ou s ( t c = 25 c) 1.7 - conti nu o us ( t c = 7 0 c ) 1.3 6 p u l s ed dr a i n cur r e nt i d m 6.8 s i ng l e p ul s e d a v a l an c h e e ne r gy e a s 5 0 repe ti t i v e a v a l an c h e e ne r gy e a r 0.2 a v al an c he cur r e nt i a r 1.7 a p o wer di s s i p ati on ( t = 25 c) 2.0 w - der at e a bo v e 25 c 0.0 1 6 t he r ma l r es i s tan c e .j un c ti on - to - a mb i en t r t h ja 62 .5 p e ak di o de re c o v e r y dv /dt dv /dt 6.0 v / ns ma x i m um l e ad t em p er atu r e for s ol de r i n g p ur po s e s , 1/8 "f r o m c as e for 5 s e c o nd s t l 3 00 j u nc ti o n a n d s tor ag e t em pe r atu r e rang e t j , t s tg - 55 to 1 50 ?? v ?? /w a i d p d mj ! " ! ! ! " " " ! " ! ! ! " " " s d g 4008-318-123 sales@twtysemi.com 1 of 4 http://www.twtysemi.com smd t ype mosfet k x 7 n 1 0 l smd type ic mosfet dip type smd type ic mosfet dip type product specification
smd t ype mosfet ?? e lec tr ica l ch a r a cte r is t ic s t a = 2 5 ?? p ar a me te r s y m bo l t e s t c o nd i to ns m i n t y p ma x un i t dr ai n- s ou r c e b r ea k do wn v ol t ag e v d s s i d = 25 0 | a , v g s = 0v 10 0 v v d s = 10 0v , v g s = 0v 1 v d s = 80 v , v g s = 0 v , t j = 1 25 ?? 10 g at e- b od y l ea k ag e c u r r en t i g s s v d s = 0v , v g s = ? 2 0v ? 1 00 n a g at e t hr es ho l d v ol t ag e v g s ( t h ) v d s = v g s i d = 2 50 | a 1 .0 2 .0 v v g s = 10 v , i d = 0 .8 5a 27 5 35 0 v g s = 5v , i d = 0. 85 a 30 0 38 0 f or war d t r an s c on d uc ta nc e g fs v d s = 30 v , i d = 0. 8 5a 2. 75 s in p ut ca pa c i t an c e c i ss 22 0 29 0 o ut pu t cap ac i ta nc e c o s s 55 72 rev er s e t r an s fe r ca pa c i t an c e c r s s 12 15 t ot a l g at e cha r g e q g 4 .6 6 .0 g at e s ou r c e char ge q g s 1 .0 g at e dr a i n char ge q g d 2 .6 t ur n- o n del ay t i m e t d ( o n ) 9 30 t ur n- o n ri s e t i m e t r 10 0 21 0 t ur n- o ff de l ay t i m e t d ( o f f ) 17 45 t ur n- o ff f al l t i m e t f 50 11 0 b od y di o de r ev e r s e rec ov e r y t i me t r r i s = 7. 3a , d i / d t = 10 0 a / | s 70 b od y di o de r ev e r s e rec ov e r y ch ar ge q r r i s = 7. 3a , d i / d t = 10 0 a / | s 14 0 nc ma x i m um b od y - di od e con ti n uo us c ur r en t i s 1 .7 a di od e f o r wa r d v o l ta ge v s d i s = 1. 7a , v g s = 0v 1 .5 v pf nc n s z er o g at e v ol t ag e dr a i n cur r e nt i d s s | a m |? v d s = 50 v , i d = 7. 3a , r g = 25 |? r d s ( o n ) s ta ti c dr a i n - s ou r c e o n- res i s t an c e v g s = 0v , v d s = 25 v , f= 1 mhz v g s = 5v , v d s = 80 v , i d = 7. 5a 4008-318-123 sales@twtysemi.com 2 of 4 http://www.twtysemi.com smd t ype mosfet k x 7 n 1 0 l smd type ic mosfet dip type smd type ic mosfet dip type product specification
smd t ype mosfet typlacl characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 25 150 notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 0246810 10 -1 10 0 notes : 1. v ds = 30v 2. 250 s pulse test -55 150 25 i d , drain current [a] v gs , gate-source voltage [v] 012345678 0 2 4 6 8 10 12 v ds = 50v v ds = 80v note : i d = 7.3 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 100 200 300 400 500 600 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 0.0 0.3 0.6 0.9 1.2 1.5 v gs = 10v v gs = 5v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 10 -1 10 0 v gs top : 10.0 v 8.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics 4008-318-123 sales@twtysemi.com 3 of 4 http://www.twtysemi.com smd t ype mosfet k x 7 n 1 0 l smd type ic mosfet dip type smd type ic mosfet dip type product specification
smd t ype mosfet k x 7 n 1 0 l typlacl characteristics -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 0.85 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 notes : 1. z jc (t) = 62.5 /w m a x. 2. d u ty f ac to r, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) s in gle pu ls e d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 4008-318-123 sales@twtysemi.com 4 of 4 http://www.twtysemi.com smd type ic mosfet dip type smd type ic mosfet dip type product specification
|
